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PTF10107

Ericsson
Part Number PTF10107
Manufacturer Ericsson
Description 5 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10107 5 Watts, 2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended ...
Datasheet PDF File PTF10107 PDF File

PTF10107
PTF10107

Overview
PTF 10107 5 Watts, 2.
0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.
0 to 2.
0 GHz.
It operates at 40% efficiency with 11 dB gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• Guaranteed Performance at 1.
99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power & Efficiency vs.
Input Power 8 100 Output Pow er Efficiency 60 Efficiency (%) X 80 Output Power (Watts) 7 6 5 4 3 2 1 0 0.
0 A-1 101 234 07 569 845 VDD = 26 V IDQ = 70 mA f = 2.
0 GHz 0.
1 0.
2 0.
3 0.
4 40 20 0 0.
5 Input Power (Watts) Package 20244 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 1 W, IDQ = 70 mA, f = 1.
93, 1.
99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 70 mA, f = 1.
99 GHz) Drain Efficiency (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.
99 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 5 W, IDQ = 70 mA, f = 1.
99 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB hD Y Min 11 5 40 — Typ — 6.
5 — — Max — — — 10:1 Units dB Watts % — e 1 PTF 10107 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance (100% Tested) e Conditions VGS = 0 V, ID = 20 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 0.
8 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 ±...


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