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PTF10112

Ericsson
Part Number PTF10112
Manufacturer Ericsson
Description 60 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10112 60 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched comm...
Datasheet PDF File PTF10112 PDF File

PTF10112
PTF10112

Overview
PTF 10112 60 Watts, 1.
8–2.
0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10112 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.
8 to 2.
0 GHz.
It is rated at 60 watts power output.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • • • • • • INTERNALLY MATCHED Guaranteed Performance at 1.
93, 1.
99 GHz, 28 V - Output Power = 60 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.
Input Power 80 Output Power (Watts) 60 A-12 40 1011 3456 2 98 37 VCC = 28 V 20 IDQ = 580 mA f = 2000 MHz 0 1 2 3 4 5 6 0 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 15 W, IDQ = 580 mA, f = 1.
93, 1.
99 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 580 mA, f = 1.
99 GHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.
99 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 580 mA, f = 1.
99 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB hD Y Min 11 60 — — Typ 12 — 41 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10112 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 100 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 4.
0 Max — 5.
0 5.
0 — Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol VDSS VGS TJ PD Va...


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