DatasheetsPDF.com

PTF10125

Ericsson
Part Number PTF10125
Manufacturer Ericsson
Description 135 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10125 135 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, co...
Datasheet PDF File PTF10125 PDF File

PTF10125
PTF10125

Overview
PTF 10125 135 Watts, 1.
4–1.
6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10125 is an internally matched, common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications from 1.
4 to 1.
6 GHz, such as DAB/DRB.
It is rated at 135 watts minimum power outpt.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • • • • • • INTERNALLY MATCHED Performance at 1.
5 GHz, 28 V - Output Power = 135 Watts Min - Power Gain = 12.
5 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.
Input Power 200 180 Output Power (Watts) 160 140 120 100 80 60 40 20 0 0 3 6 9 12 15 A-12 101 3456 25 9 VDD = 28 V IDQ = 1.
3 A Total f = 1500 MHz 935 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.
3 A Total, f = 1.
50, 1.
55 GHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.
3 A Total, f = 1.
50, 1.
55 GHz) Drain Efficiency (VDD = 28 V, POUT = 135 W, IDQ = 1.
3 A Total, f = 1.
5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 67.
5 W, IDQ = 1.
3 A Total, f = 1.
5 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps Min 11.
5 Typ 12.
5 Max — Units dB P-1dB hD Y 135 35 — 150 40 — — — 10:1 Watts % — e 1 PTF 10125 Electrical Characteristics Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested—characteristics, conditions and limits shown per side) Min 65 — 3.
0 2.
0 Typ — — — 4.
0 Max — 5.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 6 A Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Tempe...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)