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PTF10134

Ericsson
Part Number PTF10134
Manufacturer Ericsson
Description 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GO...
Datasheet PDF File PTF10134 PDF File

PTF10134
PTF10134

Overview
PTF 10134 100 Watts, 2.
1–2.
2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.
1 to 2.
2 GHz.
It is rated at 100 watts power output and operates with 10 dB typical gain.
Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.
• • INTERNALLY MATCHED Guaranteed Performance at 2.
17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability • • • Typical Output Power & Efficiency vs.
Input Power 120 Output Power 100 40 Efficiency 32 24 48 Output Power (Watts) 80 60 40 20 0 0 2 4 6 8 Efficiency (%) X 1234 101 569934 53 A VDD = 28 V IDQ = 1.
3 A Total f = 2170 MHz 16 8 0 10 12 14 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.
3 A Total, f = 2.
17 GHz) Power Output at 1.
5 dB Compression (VDD = 28 V, IDQ = 1.
3 A Total, f = 2.
17 GHz) Drain Efficiency (VDD = 28 V, POUT = 100 W, IDQ = 1.
3 A Total, f = 2.
17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 80 W, IDQ = 1.
3 A Total, f = 2.
17 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB hD Y Min 9.
5 100 — — Typ 10 — 37 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10134 Characteristic (per side) Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e Min 65 — 3.
0 — Electrical Characteristics (100% Tested—characteristics, conditions and limits shown per side) Typ — — — 4.
0 Max — 5.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 150 mA VDS = 10 V, ID = 2 A Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation Above 25°C derat...


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