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PTF10120

Ericsson
Part Number PTF10120
Manufacturer Ericsson
Description 120 Watts/ 1.8-2.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10120 120 Watts, 1.8–2.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched com...
Datasheet PDF File PTF10120 PDF File

PTF10120
PTF10120

Overview
PTF 10120 120 Watts, 1.
8–2.
0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10120 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for CDMA and TDMA applications from 1.
8 to 2.
0 GHz.
It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • INTERNALLY MATCHED Guaranteed Performance at 1.
99 GHz, 28 V - Output Power = 120 Watts Min - Power Gain = 11 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power vs.
Input Power 150 100 Output Power (Watts) 120 Output Power 90 Efficiency 60 80 Efficiency (%) 60 A-12 101 345 698 20 49 40 VDD = 28 V 30 IDQ = 1.
2 A Total f = 1990 MHz 0 3 6 9 12 15 18 20 0 0 Input Power (Watts) Package 20250 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 30 W, IDQ = 1.
2 A Total...


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