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PTF10133

Ericsson
Part Number PTF10133
Manufacturer Ericsson
Description 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 w...
Datasheet PDF File PTF10133 PDF File

PTF10133
PTF10133

Overview
PTF 10133 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10133 is an internally matched 85 watt LDMOS FET intended for cellular, GSM and D-AMPS applications.
This device operates at 50% efficiency with 13.
5 dB of gain.
Full gold metallization ensures excellent device lifetime and reliability.
• • • • • • INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.
5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.
Input Power 120 Efficiency 60 50 40 Output Power (Watts) 100 80 60 40 20 Output Pow er 0 0 1 2 3 4 5 6 Efficiency (%) VDD = 28.
0 V IDQ = 1.
0 A f = 894 MHz 30 20 10 0 A-12 3456 9947 1013 3 Input Power (Watts) Package 20248 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 85 W, IDQ = 1.
0 A, f = 894 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 1.
0 A, f = 894 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 1.
0 A, f = 894 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W, IDQ = 1.
0 A, f = 894 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB h Y Min 12.
5 85 45 — Typ 13.
5 90 50 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10133 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 3.
0 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 ±20 200 205 1.
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