PD 91791A
IRG4IBC30W
INSULATED GATE BIPOLAR
TRANSISTOR
Features
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.
5kV, 60s insulation voltage V • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Industry standard Isolated TO-220 FullpakTM outline
C
VCES = 600V
G E
VCE(on) typ.
= 2.
1V
@VGE = 15V, IC = 12 A
n-channel
Benefits
• Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard s...