DatasheetsPDF.com

IRG4IBC30UD

International Rectifier
Part Number IRG4IBC30UD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Published Nov 24, 2005
Detailed Description PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulat...
Datasheet PDF File IRG4IBC30UD PDF File

IRG4IBC30UD
IRG4IBC30UD

Overview
PD91753A IRG4IBC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.
5kV, 60s insulation voltage U • 4.
8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
95V @VGE = 15V, IC = 12A n-cha nn el Benefits • Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to CaseU Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 17 8.
9 92 92 8.
5 92 2500 ± 20 45 18 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ.
––– ––– ––– 2.
0 (0.
07) Max.
2.
8 4.
1 65 ––– Units °C/W g (oz) www.
irf.
com 1 7/17/2000 IRG4IBC30UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Collector-to-Emitter Breakdown Voltageƒ ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage V(BR)CES Min.
600 ––– ––– ––– ––– Gate Threshold Voltage 3.
0 Temperature Coeff.
of Threshold Vol...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)