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IRG4IBC30S

International Rectifier
Part Number IRG4IBC30S
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Nov 24, 2005
Detailed Description PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage ...
Datasheet PDF File IRG4IBC30S PDF File

IRG4IBC30S
IRG4IBC30S

Overview
PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • Industry standard TO-220 Full-Pak C VCES = 600V G E VCE(on) typ.
= 1.
4V @VGE = 15V, IC = 18A N-channel Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • Designed to be a "drop-in" replacement for equivalent industry -standard Generation 3 IR IGBTs TO-220 Full-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
600 23.
5 13.
0 68 68 ± 20 10 45 18 -55 to + 150 300 (0.
063 in.
(1.
6mm) from case) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθJA Wt Junction-to-Case Junction-to-Ambient, typical socket mount Weight Typ.
––– ––– 2.
1 (0.
075) Max.
2.
8 65 ––– Units °C/W g (oz) www.
irf.
com 1 08/02/01 IRG4IBC30S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min.
Typ.
Max.
Units Collector-to-Emitter Breakdown Voltage 600 — — V Emitter-to-Collector Breakdown Voltage T 18 — — V Temperature Coeff.
of Breakdown Voltage — 0.
75 — V/°C — 1.
40 1.
6 Collector-to-Emitter Saturation Voltage — 1.
84 — V — 1.
45 — Gate Threshold Voltage 3.
0 — 6.
0 Temperature Coeff.
of Threshold Voltage — -11 — mV/°C Forward Transconductance U 6.
0 11 — S — — 250 Zero Gate Voltage Collector Current µA — — 2.
0 ...


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