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IRG4IBC30KD

International Rectifier
Part Number IRG4IBC30KD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Published Nov 24, 2005
Detailed Description PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching s...
Datasheet PDF File IRG4IBC30KD PDF File

IRG4IBC30KD
IRG4IBC30KD

Overview
PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 FULLPAK C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ.
= 2.
21V @VGE = 15V, IC = 9.
2A n-ch an nel Benefits • Generation 4 IGBTs offer highest efficiencies available maximizing the power density of the system • IGBT's optimized for specific application conditions • HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise EMI • Designed to exceed the power handling capability of equivalent industry-standard IGBT TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VISOL VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current QU Clamped Inductive Load Current RU Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 17 9.
2 34 34 9.
2 34 10 2500 ± 20 45 18 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A µs V W °C Thermal Resistance Parameter RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ.
––– ––– ––– 2.
0 (0.
07) Max.
2.
8 3.
7 65 ––– Units °C/W g (oz) www.
irf.
com 1 4/24/2000 IRG4I...


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