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IRG4IBC30FD

International Rectifier
Part Number IRG4IBC30FD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Published Nov 24, 2005
Detailed Description PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1...
Datasheet PDF File IRG4IBC30FD PDF File

IRG4IBC30FD
IRG4IBC30FD

Overview
PD- 91751A IRG4IBC30FD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Very Low 1.
59V votage drop 2.
5kV, 60s insulation voltage … 4.
8 mm creapage distance to heatsink Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode).
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline C Fast CoPack IGBT VCES = 600V G E VCE(on) typ.
= 1.
59V @VGE = 15V, IC = 17A n-ch an nel Benefits • Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode minimizes switching losses and EMI TO-220 FULLPAK Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM Visol VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case… Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600 20.
3 11 120 120 8.
5 120 2500 ± 20 45 18 -55 to +150 300 (0.
063 in.
(1.
6mm) from case) 10 lbf•in (1.
1 N•m) Units V A V W °C Thermal Resistance Parameter RθJC RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ.
––– ––– ––– 2.
0 (0.
07) Max.
2.
8 4.
1 65 ––– Units °C/W g (oz) www.
irf.
com 1 3/26/99 IRG4IBC30FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES Parameter Collector-to-Emitter Breakdown Voltageƒ ∆V(BR)CES/∆TJ Temperature Coeff.
of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage Min.
600 ––– ––– ––– ––– Gate Threshold Voltage 3.
0 Tempera...


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