PD91753A
IRG4IBC30UD
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
• 2.
5kV, 60s insulation voltage U • 4.
8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighter parameter distribution • Industry standard Isolated TO-220 FullpakTM outline
C
UltraFast CoPack IGBT
VCES = 600V
G E
VCE(on) typ.
= 1.
95V
@VGE = 15V, IC = 12A
n-cha nn el
Benefits
• Simplified assembly • Highest efficiency and power density • HEXFREDTM antiparallel Diode minimizes switching losses and EMI
TO-220 FULLPA...