www.
DataSheet4U.
com HAT2205C Silicon N Channel MOS FET Power Switching REJ03G1237-0400 Rev.
4.
00 Jan 26, 2006 Features • Low on-resistance RDS (on) = 38 mΩ typ.
(at VGS = 4.
5 V) • Low drive current.
• High density mounting • 1.
8 V gate drive devices.
Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperatur...

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