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HAT2203C

Renesas Technology
Part Number HAT2203C
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description www.DataSheet4U.com HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0400 Rev.4.00 May 19.2005 Features •...
Datasheet PDF File HAT2203C PDF File

HAT2203C
HAT2203C

Overview
www.
DataSheet4U.
com HAT2203C Silicon N Channel MOS FET Power Switching REJ03G0447-0400 Rev.
4.
00 May 19.
2005 Features • Low on-resistance RDS(on) = 69 mΩ typ.
(at VGS = 4.
5 V) • Low drive current • High density mounting • 2.
5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to Source voltage VDSS Gate to Source voltage VGSS Drain current ID Note1 Drain peak current ID (pulse) Body - Drain diode reverse Drain current IDR Channel dissipation Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6mm) Ratings 20 ±12 2 8 2 830 150 –55 to +150 Unit V V A A A mW °C °C Rev.
4.
00 May.
19, 2005 page 1 of 6 HAT2203C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source breakdown vo...


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