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HAT2206C

Renesas Technology
Part Number HAT2206C
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description www.DataSheet4U.com HAT2206C Silicon N Channel MOS FET Power Switching REJ03G1238-0500 Rev.5.00 Jan 26, 2006 Features ...
Datasheet PDF File HAT2206C PDF File

HAT2206C
HAT2206C

Overview
www.
DataSheet4U.
com HAT2206C Silicon N Channel MOS FET Power Switching REJ03G1238-0500 Rev.
5.
00 Jan 26, 2006 Features • Low on-resistance RDS (on) = 65 mΩ typ.
(at VGS = 4.
5 V) • Low drive current.
• High density mounting • 1.
8 V gate drive devices.
Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current ID Drain peak current ID (pulse)Note1 Body - Drain diode reverse drain current IDR Channel dissipation PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board.
(FR4 40 × 40 × 1.
6 mm) Ratings 12 ±8 2 8 2 830 150 –55 to +150 Unit V V A A A mW °C °C Rev.
5.
00 Jan 26, 2006 page 1 of 6 HAT2206C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source brea...


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