DatasheetsPDF.com

HAT2207C

Renesas Technology
Part Number HAT2207C
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Apr 13, 2010
Detailed Description HAT2207C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V) ...
Datasheet PDF File HAT2207C PDF File

HAT2207C
HAT2207C

Overview
HAT2207C Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ.
(at VGS = 4.
5 V) • Low drive current.
• High density mounting • 2.
5 V gate drive devices.
Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1239-0600 Rev.
6.
00 Feb 28, 2006 23 45 DD DD 6 G S 1 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID (pulse)Note1 Body - Drain diode reverse drain current Channel dissipation IDR PchNote 2 Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board.
(FR4 40 ʷ 40 ʷ 1.
6 mm) Ratings 20 ±12 1.
5 6 1.
5 790 150 –55 to +150 (Ta = 25°C) Unit V V A A A mW °C °C Rev.
6.
00 Feb 28, 2006 page 1 of 6 HAT2207C Electrical Characteristics Item Drain to Source breakdown voltage Gate to Source b...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)