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HAT2204C

Renesas Technology
Part Number HAT2204C
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Sep 11, 2007
Detailed Description www.DataSheet4U.com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.5.00 May 10, 2007 Features ...
Datasheet PDF File HAT2204C PDF File

HAT2204C
HAT2204C

Overview
www.
DataSheet4U.
com HAT2204C Silicon N Channel MOS FET Power Switching REJ03G0448-0500 Rev.
5.
00 May 10, 2007 Features • Low on-resistance RDS(on) = 26m Ω typ.
(at VGS = 4.
5 V) • Low drive current • High density mounting • 1.
8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 2 3 4 5 DDD D 6 G 1.
Source 2.
Drain 3.
Drain 4.
Drain 5.
Drain 6.
Gate S 1 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Pch Note2 Tch Tstg Note1 Ratings 12 ±8 3.
5 14 3.
5 900 150 –55 to +150 Unit V V A A A mW °C °C Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
When using the glass epoxy board (FR4 40 x 40 x 1.
6mm) REJ03G0448-0500 Rev.
5.
00 May 10, 2007 Page 1 of 7 HAT2204C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdo...


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