CES2308
N-Channel Enhancement Mode Field Effect
Transistor FEATURES
20V, 5.
4A, RDS(ON) = 27mΩ @VGS = 4.
5V.
RDS(ON) = 36mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D PRELIMINARY
G
D G SOT-23 S
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C
±12
5.
4 22 1.
25 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Uni...