P-Channel Enhancement Mode Field Effect
Transistor FEATURES
-20V, -4.
2A, RDS(ON) = 48mΩ @VGS = -4.
5V.
RDS(ON) = 60mΩ @VGS = -2.
5V.
RDS(ON) = 78mΩ @VGS = -1.
8V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
G
S G SOT-23
CES2331
D
D
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -20 Units V V A A W C
±12
-4.
2 -15 1.
25 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b...