N-Channel MOSFET
CES2342 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 4.2A, RDS(ON) = 45mΩ @VGS = 10V. RDS(ON) = 58mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Curr...
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