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STP601D

Stanson Technology
Part Number STP601D
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mo...
Datasheet PDF File STP601D PDF File

STP601D
STP601D

Overview
STP601 / STP601D P Channel Enhancement Mode MOSFET -30A DESCRIPTION STP601/STP601D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The STP401 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE -60V/-20.
0A, RDS(ON) = 20mΩ(typ.
) @VGS = -10V -60V/-20.
0A, RDS(ON) = 27mΩ @VGS = -4.
5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design ( STP601D ) PART MARKING ( STP610 ) Y: Year Code A: Week Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STP601 / STP601D 2010.
V1 STP601 / STP601D P Channel Enhancement Mode MOSFET -30A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted) Parameter Drain-Source Voltage Symbo l VDSS Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM Continuous Source Current (Diode Conduction) IS Power Dissipation TA=25℃ PD Operation Junction Temperature TJ Storage Temperature Range TSTG Thermal Resistance-Junction to Ambient RθJA Typical -60 ±20 -30.
0 -22.
0 -110 -30 60 150 -55/150 25 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com Copyright © 2009, Stanson Corp.
STP601 / STP601D 2010.
V1 STP601 / STP601D P Channel Enhancement Mode MOSFET -30A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current V(BR)DSS VGS(th) IGSS IDSS...


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