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STP605D

Part Number	STP605D
Manufacturer	STANSON
Description	P-Channel Enhancement Mode MOSFET
Published	Sep 3, 2018
Detailed Description	STP605D P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION STP605D is the P-Channel logic enhancement mode power field...
Datasheet	STP605D PDF File

Overview

STP605D P Channel Enhancement Mode MOSFET -15.
0A DESCRIPTION STP605D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 FEATURE l -60V/-10.
0A, RDS(ON) = 70mΩ（Typ.
） @VGS = -10V l -60V/-5.
0A, RDS(ON) = 80mΩ（Typ.
） @VGS = -10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252package design PART MARKING STP605D FXGA F：Year Code X：Date Code Q：Process Code A：Wafer Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com .
STP607D 2010.
V1 STP605D P Channel Enhancement Mode MOSFET -15.
0A ABSOULTE MAXIM...

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