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STP607D

Stanson Technology
Part Number STP607D
Manufacturer Stanson Technology
Description MOSFET
Published Sep 25, 2016
Detailed Description STP607D P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP607D is the P-Channel logic enhancement mode power field...
Datasheet PDF File STP607D PDF File

STP607D
STP607D

Overview
STP607D P Channel Enhancement Mode MOSFET -10.
0A DESCRIPTION STP607D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE -60V/-10.
0A, RDS(ON) = 150mΩ（Typ.
） @VGS = -10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com .
STP607D 2010.
V1 STP607D P Channel Enhancement Mode MOSFET -10.
0A ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Drain-Source Voltage Symbo l VDSS Typical -60 Gate-Source Voltage Continuous Drain Current (TJ=150℃) Pulsed Drain Current TA=25℃ TA=100℃ VGSS ID IDM ±20 -10.
0 -6.
0 -20 Continuous Source Current (Diode Conduction) IS -12 Power Dissipation TA=25℃ PD 25 Operation Junction Temperature TJ 150 Storgae Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 20 Unit V V A A A W ℃ ℃ ℃/W STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com .
STP607D 2010.
V1 STP607D P Channel Enhancement Mode MOSFET -10.
0A ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted ) Parameter Symbol Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current V(BR)DSS VGS(th) IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current Drain-source OnResistance Forward Transconductance Diode Forward Voltage ID(on) RDS(on) gfs VSD Condition VGS=0V,ID=-250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±20V VDS=-48V,VGS=0V VDS=-48V,VGS=0V TJ=55...


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