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CES2317

CET
Part Number CES2317
Manufacturer CET
Description P-Channel MOSFET
Published Apr 10, 2017
Detailed Description CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.1A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = ...
Datasheet PDF File CES2317 PDF File

CES2317
CES2317

Overview
CES2317 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.
1A, RDS(ON) = 80mΩ @VGS = -10V.
RDS(ON) = 90mΩ @VGS = -4.
5V.
RDS(ON) = 120mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead-free plating ; RoHS compliant.
SOT-23 package.
DS G SOT-23 G D S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3.
1 IDM -12 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V A A W C Units C/W Details are subject to change without notice .
1 Rev 1 2012.
Jan http://www.
cetsemi.
com CES2317 Electrical Characteristics TA = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drai...


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