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AO6404

Alpha & Omega Semiconductors
Part Number AO6404
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jul 10, 2007
Detailed Description AO6404 20V N-Channel MOSFET General Description • The AO6404 uses advanced trench technology to provide excellent RDS(O...
Datasheet PDF File AO6404 PDF File

AO6404
AO6404

Overview
AO6404 20V N-Channel MOSFET General Description • The AO6404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.
8V while retaining a 12V VGS(MAX) rating.
• RoHS and Halogen-Free Compliant Product Summary VDS (V) = 20V ID = 8.
6A (VGS = 10V) RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 18mΩ (VGS = 4.
5V) RDS(ON) < 24mΩ (VGS = 2.
5V) RDS(ON) < 33mΩ (VGS = 1.
8V) ESD Rating: 2000V HBM ESD Protected 100% UIS Tested 100% Rg Tested TSOP6 Top View Bottom View Top View D Pi n 1 D1 D2 G3 6D 5D 4S G S Orderable Part Number AO6404 Package Type TSOP6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 8.
6 6.
8 30 2 1.
28 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 45 70 33 Max 62.
5 110 50 Units °C/W °C/W °C/W Rev.
5.
0: April 2016 www.
aosmd.
com Page 1 of 5 AO6404 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS BVGSO VGS(th) ID(ON) Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current ID=250µA, VGS=0V VDS=16V, VGS=0V VDS=0V, VGS=±10V VDS=0V, IG=±250uA VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=8.
5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=5A VGS=2.
5V, ID=4A VGS=1.
8V, ID=3A Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=...


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