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AO6401

Alpha & Omega Semiconductors
Part Number AO6401
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Jul 10, 2007
Detailed Description AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology...
Datasheet PDF File AO6401 PDF File

AO6401
AO6401

Overview
AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 specifications).
AO6401L is a Green Product ordering option.
AO6401 and AO6401L are electrically identical.
Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(ON) < 49mΩ (VGS = -10V) RDS(ON) < 64mΩ (VGS = -4.
5V) RDS(ON) < 119mΩ (VGS = -2.
5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S www.
DataSheet4U.
com G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±12 -5 -4.
2 -30 2 1.
44 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.
5 74 37 Max 62.
5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6401 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=-5A Static Drain-Source On-Resistance TJ=125°C VGS=-4.
5V, ID=-4A 7 53 81 11 -0.
75 -0.
7 -25 42 49 74 64 119 -1 -3 943 108 73 6 9.
5 2.
1 2.
9 6 3 40 11 21.
2 12.
8 -1 Min -30 -1 -5 ±100 -1.
3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC gFS VSD IS VGS=-2.
5V, ID=-1A Forward Transconductance VDS=-5V, ...


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