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AO6402

Alpha & Omega Semiconductors
Part Number AO6402
Manufacturer Alpha & Omega Semiconductors
Description N-Channel MOSFET
Published Jul 10, 2007
Detailed Description Rev 3:Nov 2004 AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description...
Datasheet PDF File AO6402 PDF File

AO6402
AO6402

Overview
Rev 3:Nov 2004 AO6402, AO6402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device may be used as a load switch or in PWM applications.
AO6402L ( Green Product ) is offered in a lead-free package.
Features VDS (V) = 30V ID = 6.
9A RDS(ON) < 28m Ω (VGS = 10V) RDS(ON) < 42m Ω (VGS = 4.
5V) TSOP-6 Top View www.
DataSheet4U.
com D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 6.
9 5.
8 20 2 1.
44 -55 to 150 Units V V A VGS TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 35 Max 62.
5 110 40 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6402, AO6402L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=250µA VGS=4.
5V, VDS=5V VGS=10V, ID=6.
9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=5.
0A Forward Transconductance VDS=5V, ID=6.
9A 10 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current TJ=125°C 1 20 22.
5 31.
3 34.
5 15.
4 0.
76 1 3 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 102 77 3 13.
84 VGS=10V, VDS=15V, ID=6.
9A 6.
74 1.
82 3.
2 4.
6 VGS=10V, VDS=15V, RL=2.
2Ω, RGEN=3Ω IF=6.
9A, dI/dt=100A/µs 4.
1 20.
6 5.
2 16.
5 7.
8 20 3.
6 16.
7 8.
1 820 28 38 42 1.
9 Min 30 1 5 100 3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage ...


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