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AO6402A

Alpha & Omega Semiconductors
Part Number AO6402A
Manufacturer Alpha & Omega Semiconductors
Description 30V N-Channel MOSFET
Published Aug 18, 2014
Detailed Description AO6402A 30V N-Channel MOSFET General Description The AO6402A uses advanced trench technology to provide excellent RDS(O...
Datasheet PDF File AO6402A PDF File

AO6402A
AO6402A

Overview
AO6402A 30V N-Channel MOSFET General Description The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Product Summary VDS (V) = 30V ID = 7.
5A RDS(ON) < 24mΩ RDS(ON) < 35mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.
5V) TSOP6 Top View Bottom View Top View D D D G 1 2 3 6 5 4 D D S G S Pin1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A,F Pulsed Drain Current Power Dissipation B Maximum 30 ±20 7.
5 6.
0 64 2.
0 1.
28 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 48 74 54 Max 62.
5 110 68 Units ° C/W ° C/W ° C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO6402A Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=7.
5A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.
5V, ID=5.
6A Forward Transconductance Diode Forward Voltage VDS=5V, ID=7.
5A IS=1A,VGS=0V C TJ=125° 1.
5 64 17.
3 25 25 20 0.
75 1 2.
5 373 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 67 41 2 7.
2 VGS=10V, VDS=15V, ID=7.
5A 3.
5 1.
3 1.
7 4.
5 VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω IF=7.
5A, dI/dt=100A/µs 2.
7 14.
9 2.
9 10.
5 4.
5 6.
5 4.
5 23 5.
5 12.
6 5.
4 2.
8 11 5 448 24 34 35 2.
1 Min 30 1 5 100 2.
6 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain C...


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