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AO6403

Alpha & Omega Semiconductors
Part Number AO6403
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Jul 10, 2007
Detailed Description AO6403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6403 uses advanced trench technology...
Datasheet PDF File AO6403 PDF File

AO6403
AO6403

Overview
AO6403 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6403 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge.
This device is suitable for use as a load switch or in PWM applications.
It may be used in common-drain configuration to form a bidirectional blocking switch.
AO6403 is Pb-free (meets ROHS & Sony 259 specifications).
AO6403L is a Green Product ordering option.
AO6403 and AO6403L are electrically identical.
Features VDS (V) = -30V ID = -6 A (VGS = -10V) RDS(ON) < 35mΩ (VGS = -10V) RDS(ON) < 58mΩ (VGS = -4.
5V) D TSOP6 Top View www.
DataSheet4U.
com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -6 -5 -30 2 1.
44 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.
5 74 37 Max 62.
5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6403 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.
5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6A TJ=125°C -1.
2 30 28 37 44 13 -0.
76 35 45 58 -1 -4.
2 -2 Min -30 -1 -5 ±100 -2.
4 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ...


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