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AO6405

Alpha & Omega Semiconductors
Part Number AO6405
Manufacturer Alpha & Omega Semiconductors
Description P-Channel MOSFET
Published Jul 10, 2007
Detailed Description Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6405 uses advanced trench ...
Datasheet PDF File AO6405 PDF File

AO6405
AO6405

Overview
Aug 2002 AO6405 P-Channel Enhancement Mode Field Effect Transistor General Description The AO6405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge.
This device is suitable for use as a load switch or in PWM applications.
Features VDS (V) = -30V ID = -5 A RDS(ON) < 52mΩ (VGS = -10V) RDS(ON) < 87mΩ (VGS = -4.
5V) D TSOP6 Top View www.
DataSheet4U.
com D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -30 ±20 -5 -4.
2 -20 2 1.
4 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 47.
5 74 37 Max 62.
5 110 50 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
AO6405 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.
5V, ID=-4A Forward Transconductance VDS=-5V, ID=-5A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS ID=-250µA VGS=-4.
5V, VDS=-5V VGS=-10V, ID=5.
0A TJ=125°C 6 -1 -10 39 54 67 8.
6 -0.
77 52 70 87 -1 -2.
8 700 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 120 75 10 14.
7 VGS=-10V, VDS=-15V, ID=-5A 7.
6 2 3.
8 8.
3 5 29 14 23.
5 13.
4 -1.
8 Min -30 -1 -5 ±100 -3 Typ Max Units V µA nA V A mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Rg Reverse Transfer Capacitanc...


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