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PTF10020

Ericsson
Part Number PTF10020
Manufacturer Ericsson
Description 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Published Apr 7, 2005
Detailed Description PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 12...
Datasheet PDF File PTF10020 PDF File

PTF10020
PTF10020

Overview
PTF 10020 125 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.
• • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.
5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs.
Input Power 150 960 MHz Output Power (Watts) 125 100 75 860 MHz 50 900 MHz A-1 100 20 234 569 813 VDD = 28 V 25 0 0 1 2 3 4 5 6 7 IDQ = 1.
4 A Total Input Power (Watts) Package 20240 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 125 W, IDQ = 1.
4 A Total, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, ICQ = 1.
4 A Total, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 125 W, IDQ = 1.
4 A Total, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 125 W(PEP), IDQ = 1.
4 A Total, f = 959.
9, 960 MHz—all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
P-1dB h Y 125 50 — 130 55 — — — 10:1 Watts % — Symbol Gps Min 11.
0 Typ 12.
5 Max — Units dB e 1 PTF 10020 Electrical Characteristics Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested—characteristics, conditions and limits shown per side) Min 65 — 3.
0 — Typ — — 4.
3 2.
5 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) (1)per side S...


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