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PTF10043

Ericsson
Part Number PTF10043
Manufacturer Ericsson
Description 12 Watts/ 1.9-2.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10043 12 Watts, 1.9–2.0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10043 is an internally matched GOL...
Datasheet PDF File PTF10043 PDF File

PTF10043
PTF10043

Overview
PTF 10043 12 Watts, 1.
9–2.
0 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.
9 to 2.
0 GHz.
Rated at 12 watts, it operates at 45% efficiency with 12 dB gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • INTERNALLY MATCHED Performance at 2.
0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 Watts - Efficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power vs.
Input Power 20 Output Power (Watts) 16 12 8 4 0 0.
0 0.
2 0.
4 0.
6 0.
8 1.
0 A-12 100 3456 9834 43 VDD = 26 V IDQ = 150 mA f = 2.
0 GHz Input Power (Watts) Package 20222 RF Specifications (100% Tested) Characteristic Gain (VDD = 26 V, POUT = 3 W, IDQ = 150 mA, f = 1.
93, 2.
0 GHz) Power Output at 1 dB Compressed (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.
0 GHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.
0 GHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 150 mA, f = 2.
0 GHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps p-1dB hD Y Min 11 12 40 — Typ 12 14 45 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10043 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 0.
8 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC S...


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