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PTF10009

Ericsson
Part Number PTF10009
Manufacturer Ericsson
Description 85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10009 85 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended ...
Datasheet PDF File PTF10009 PDF File

PTF10009
PTF10009

Overview
PTF 10009 85 Watts, 1.
0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.
0 GHz.
It operates at 50% efficiency and 13.
0 dB of gain.
Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.
0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% lot traceability • • • • Typical Output Power and Efficiency vs.
Input Power 100 90 Output Power (W) 80 70 60 50 40 30 20 10 0 0.
0 1.
0 2.
0 3.
0 4.
0 5.
0 Efficiency (%) 80 72 64 56 48 40 32 24 16 8 0 Output Power Efficiency 1234 1000 5697 44 9 VDS = 28 V IDQ = 600 mA Total f = 960 MHz Input Power (Watts) Package 20230 Maximum Ratings Parameter Drain-Source Voltage (1) Gate-Source Voltage (1) Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) (1)per side Symbol VDSS VGS TJ PD TSTG RqJC Value 65 ±20 200 270 1.
54 -65 to 150 0.
65 Unit Vdc Vdc °C Watts W/°C °C °C/W All published data at TCASE = 25°C unless otherwise indicated.
e 1 PTF 10009 Electrical Characteristics Characteristic (per side) Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested—characteristics, conditions and limits shown per side) Min 65 — 3.
0 — Typ — — — 2.
8 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Dynamic Characteristics Characteristic (per side) Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1 MHz) Symbol Ciss Coss Crss Min — — — Typ 90 36 1.
9 Max ...


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