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PTF10019

Ericsson
Part Number PTF10019
Manufacturer Ericsson
Description 70 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10019 70 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10019 is an internally matched, 70 ...
Datasheet PDF File PTF10019 PDF File

PTF10019
PTF10019

Overview
PTF 10019 70 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz range.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 70 Watts - Power Gain = 14.
5 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.
Input Power 80 74 Output Power 60 Efficiency 40 66 Output Power (Watts) 50 42 Efficiency (%) 58 A-1 100 2 3 4 19 568 VDD = 28 V 20 34 26 18 10 4.
0 955 IDQ = 600 mA f = 960 MHz 0.
0 1.
0 2.
0 3.
0 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 600 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, Pout = 70 W, IDQ = 600 mA, f = 960 MHz —all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gpe P-1dB h Y Min 13.
0 70 45 — Typ 14.
5 75 50 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10019 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 3.
0 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 ±20 ...


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