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PTF10021

Ericsson
Part Number PTF10021
Manufacturer Ericsson
Description 30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
Published Apr 7, 2005
Detailed Description PTF 10021 30 Watts, 1.4–1.6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10021 is an internally matched comm...
Datasheet PDF File PTF10021 PDF File

PTF10021
PTF10021

Overview
PTF 10021 30 Watts, 1.
4–1.
6 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10021 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for linear driver and final applications in the 1.
4 to 1.
6 GHz range such as DAB/DAR.
It is rated at 30 watts power output.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • • • • • INTERNALLY MATCHED Performance at 1.
5 GHz, 28 Volts - Output Power = 30 Watts Min - Power Gain = 13 dB Typ - Efficiency = 48% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability Typical Output Power vs.
Input Power 40 Output Power (Watts) 30 20 100 21 A-1 234 569 813 VDD = 28 V 10 IDQ = 360 mA f = 1.
5 GHz 0 1 2 3 4 5 0 Input Power (Watts) Package 20237 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 10 W, IDQ = 360 mA, f = 1.
5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.
5 GHz) Drain Efficiency (VDD = 28 V, POUT = 30 W, IDQ = 360 mA, f = 1.
5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 30 W(PEP), IDQ = 360 mA, f = 1.
5 GHz— all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB h Y Min 11.
0 30 45 — Typ 13.
0 — 48 — Max — — — 10:1 Units dB Watts % — e 1 PTF 10021 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 2.
2 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) TSTG RqJC Symbol...


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