DatasheetsPDF.com

PTF10036

Ericsson
Part Number PTF10036
Manufacturer Ericsson
Description 85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10036 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10036 is an internally matched, 85 ...
Datasheet PDF File PTF10036 PDF File

PTF10036
PTF10036

Overview
PTF 10036 85 Watts, 860–960 MHz GOLDMOS™ Field Effect Transistor Description The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 12.
5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs.
Input Power 100 60 Efficiency (%) 80 Output Pow er 60 40 20 0 0 1 2 3 4 5 6 40 50 Efficiency Output Power (Watts) A-1 VDD = 28 V IDQ = 800 mA Total f = 960 MHz 30 20 10 100 234 36 569 74 4 Input Power (Watts) Package 20240 RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 800 mA Total, f = 900 MHz) Drain Efficiency (VDD = 28 V, POUT = 85 W, IDQ = 800 mA Total, f = 900 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 85 W(PEP), IDQ = 800 mA Total, f = 867, 867.
1 MHz—all phase angles at frequency of test) All published data at TCASE = 25°C unless otherwise indicated.
Symbol Gps P-1dB h Y Min 11.
0 85 50 — Typ 12.
5 90 55 — Max — — — 3:1 Units dB Watts % — e 1 PTF 10036 Electrical Characteristics Characteristic Conditions Symbol V(BR)DSS IDSS VGS(th) gfs e (100% Tested—characteristics, conditions and limits shown per side) Min 65 — 3.
0 — Typ — — — 2.
8 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 5 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Maximum Ratings Parameter Drain-Source Voltage(1) Gate-Source Voltage(1) Operating Junction Temperature Total Device Dissipation at Above 25°C derate by Storage Temperature Range Thermal Resi...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)