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PTF10031

Ericsson
Part Number PTF10031
Manufacturer Ericsson
Description 50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
Published Apr 16, 2005
Detailed Description PTF 10031 50 Watts, 1.0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended f...
Datasheet PDF File PTF10031 PDF File

PTF10031
PTF10031

Overview
PTF 10031 50 Watts, 1.
0 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.
0 GHz.
It operates at 55% efficiency and 13.
0 dB of gain.
Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
• Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.
0 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source Available in Package 20235 as PTF 10015 100% Lot Traceability • • • • • • Typical Power Out & Efficiency vs.
Power In 70 60 90 80 Output Power (W) Efficiency (%) 70 60 50 Output Power 50 40 30 20 10 0 0 A -1 2 1003 1 3456 9744 Package 20222 VDD = 28 V IDQ = 350 mA f = 960 MHz 1 2 3 4 40 30 20 Efficiency Package 20235 A-1 100 15 234 561 970 Input Power (Watts) Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation TCASE = 25°C Above 25°C derate by Storage Temperature Range Thermal Resistance (TCASE = 70°C) All published data at TCASE = 25°C unless otherwise indicated.
TSTG RqJC Symbol VDSS VGS TJ PD Value 65 ±20 200 175 1.
0 -65 to 150 1.
0 Unit Vdc Vdc °C Watts W/°C °C °C/W e 1 PTF 10031 Electrical Characteristics (100% Tested) Characteristic Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance e Conditions VGS = 0 V, ID = 25 mA VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 3 A Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 — 3.
0 — Typ — — — 2.
8 Max — 1.
0 5.
0 — Units Volts mA Volts Siemens RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 350 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 50 W, IDQ = 350 mA, f = 960 MHz) Load Mismatch Tolerance (VDD...


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