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PTF10138 Datasheet PDF


Part Number PTF10138
Manufacturer Ericsson
Title 60 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
Description The PTF 10138 is a 60–watt GOLDMOS FET intended for amplifier applications to 860-960 MHz. It operates at 48% efficiency with 12.5 dB gain. Nitrid...
Features istic Common Source Power Gain (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 500 mA, f = 960 MHz) Drain Efficiency (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 60 W, IDQ = 500 mA, f = 960 M...

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Datasheet PTF10138 PDF File








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PTF10009 : The PTF 10009 is an 85 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 50% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 13.0 dB Typ - Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% lot traceability • • • • Typical Output Power and Efficiency vs. Input Power 100 90 Output Power (W) 80 70 60 50 40 30 20 10 0 0.0 1.0 2.0 3.0 4.0 5.0 Efficiency (%) 80 72 64 56 48 40 32 24 16 8 0 Output Power Efficiency 1234 1000 .

PTF10015 : The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Features • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ, 12.0 dB Min - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source 100% lot traceability Available in Package 20222 as PTF 10031 • • • • • • Typical Power Out & Efficiency vs. Power In 70 60 90 80 70 Efficiency (%) 40 30 20 10 0 0 1 2 3 4 60 50 A-1 234.

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PTF10020 : The PTF 10020 is an internally matched, 125 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 125 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs. Input Power 150 960 MHz Output Power (Watts) 125 100 75 860 MHz 50 900 MHz A-1 100 20 234 569 813 VDD = 28 V 25 0 0 1 2 3 4 5 6 7 IDQ = 1.4 A Total Input Power (Watts) Package 20240 RF Specificati.

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PTF10031 : The PTF 10031 is a 50 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 50 Watts - Power Gain = 13.0 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability Back Side Common Source Available in Package 20235 as PTF 10015 100% Lot Traceability • • • • • • Typical Power Out & Efficiency vs. Power In 70 60 90 80 Output Power (W) Efficiency (%) 70 60 50 Output Power 50 40 30 20 10 0 0 A -1 2 1003 1 3456 974.

PTF10036 : The PTF 10036 is an internally matched, 85 Watt LDMOS FET intended for large signal amplifier applications from 860 to 960 MHz. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 960 MHz, 28 Volts - Output Power = 85 Watts - Power Gain = 12.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Typical Output Power vs. Input Power 100 60 Efficiency (%) 80 Output Pow er 60 40 20 0 0 1 2 3 4 5 6 40 50 Efficiency Output Power (Watts) A-1 VDD = 28 V IDQ = 800 mA Total f = 960 MHz 30 20 10 100 234 36 569 74 4 Input .

PTF10043 : The PTF 10043 is an internally matched GOLDMOS FET intended for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at 12 watts, it operates at 45% efficiency with 12 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • INTERNALLY MATCHED Performance at 2.0 GHz, 26 Volts - Output Power = 12 Watts Min - Power Gain = 12 dB Typ at 3 Watts - Efficiency = 45% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0.0 0.2 0.4 0.6 0.8 1.0 A-12 100 3456 9834 43 .

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PTF10052 : The PTF 10052 is a 35 Watt LDMOS FET intended for large signal amplifier applications to 1.0 GHz. It operates at 55% efficiency and 13.5 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 960 MHz, 28 Volts - Output Power = 35 Watts - Power Gain = 13.5 dB Typ - Efficiency = 55% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% Lot Traceability Available in Package 20222 as PTF 10007 • • • • • Typical Output Power & Efficiency vs. Input Power 50 40 Output Pow er (W) Ef ficiency (%) 100 80 60 40 20 0 0 1 2 3 Package 20235 Efficiency B-1 234 100 52 56 991 Output Power 6 .

PTF10053 : The PTF 10053 is a 12–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 12 Watts Min - Power Gain = 12 dB Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power & Efficiency vs. Input Power 16 14 Efficiency 50 45 Efficiency (%) X 40 35 Output Power 8 6 30 25 Output Power (Watts) 12 10 A-1 100 2 3 4 53 569 911 VDD = 26 V 4 2 0 0.0 0.5 1.0 .

PTF10065 : The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS amplifier applications from 1.93 to 1.99 GHz. It typically operates with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • • INTERNALLY MATCHED Guaranteed Performance at 1.99 GHz, 28 V - Output Power = 30 Watts Min - Power Gain = 11.0 dB Typ Full Gold Metallization Silicon Nitride Passivated Excellent Thermal Stability 100% Lot Traceability • • • • Output Power and Efficiency vs. Input Power 40 Output Power 80 70 60 Efficiency 20 Output Power (Watts) 30 Efficiency 50 40 e 065 123 456 992 1A 10 VDD = 28 V 10 30 20 10 0 IDQ = 380 mA f = 1.99 GHz 0 1 2 3 0 In.

PTF10100 : The 10100 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for large signal amplifier applications from 860 to 900 MHz. It is rated at 165 watts power output. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • • • • • INTERNALLY MATCHED Performance at 894 MHz, 28 Volts - Output Power = 165 Watts - Power Gain = 13.0 dB Typ - Drain Efficiency = 50% Typ Full Gold Metallization Silicon Nitride Passivated Back Side Common Source 100% lot traceability Typical Output Power & Efficiency vs. Input Power 180 60 Efficiency Output Power (Watts) Efficiency (%) 140 45 100 30 A-12 3456 9917 1010 0 VDD.

PTF10107 : The PTF 10107 is a 5–watt GOLDMOS FET intended for large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 11 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Guaranteed Performance at 1.99 GHz, 26 V - Output Power = 5 Watts Min - Power Gain = 11 dB Min Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% Lot Traceability • • • • • Typical Output Power & Efficiency vs. Input Power 8 100 Output Pow er Efficiency 60 Efficiency (%) X 80 Output Power (Watts) 7 6 5 4 3 2 1 0 0.0 A-1 101 234 07 569 845 VDD = 26 V IDQ = 70 mA f = 2.0 GHz 0.1 0.2.

PTF10111 : The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ Full Gold Metallization Silicon Nitride Passivated 100% Lot Traceability • • • Typical Output Power vs. Input Power 8 Output Power (Watts) 7 6 5 4 3 2 1 0 0.0 0.1 0.2 0.3 0.4 0.5 A-12 3456 9820 1011 1 VDD = 28V IDQ = 75 mA f = 1.5 GHz Input Power (Watts) Package 20222 Maximum Ratings Parameter Drain-Source Voltage Gate-Source Volt.




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