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CES2310

Chino-Excel Technology
Part Number CES2310
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.8A, RDS(ON) = 34mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = ...
Datasheet PDF File CES2310 PDF File

CES2310
CES2310

Overview
N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 4.
8A, RDS(ON) = 34mΩ @VGS = 10V.
RDS(ON) = 40mΩ @VGS = 4.
5V.
RDS(ON) = 60mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
G S G SOT-23 CES2310 D D S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 30 Units V V A A W C ±12 4.
8 20 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 3.
2007.
Aug http://www.
cetsemi.
com CES2310 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 15V, ID = 4.
8A, VGS = 4.
5V VDD = 15V, ID = 4.
8A, VGS = 10V, RGEN = 3Ω 10 3 35 4 9.
0 2.
3 2.
2 4.
8 1 20 6 70 8 12 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 4.
8A VGS = 4.
5V, ID = 4A VGS = 2.
5V, ID = 2A gFS Ciss Coss Crss VDS = 10V, ID = 4.
8A VDS = 15V, VGS = 0V, f = 1.
0 MHz 0.
6 28 32 45 12 610 125 80 1.
4 34 40 60 V mΩ mΩ mΩ S pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V ...


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