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CES2312

Chino-Excel Technology
Part Number CES2312
Manufacturer Chino-Excel Technology
Description N-Channel MOSFET
Published Mar 11, 2011
Detailed Description CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.5A, RDS(ON) = 33mΩ @VGS = 4.5V. RDS(ON) = 40m...
Datasheet PDF File CES2312 PDF File

CES2312
CES2312

Overview
CES2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 4.
5A, RDS(ON) = 33mΩ @VGS = 4.
5V.
RDS(ON) = 40mΩ @VGS = 2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit 20 Units V V A A W C ±8 4.
5 13.
5 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com 2005.
November 7 - 22 http://www.
cetsemi.
com CES2312 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = 1A VDS = 10V, ID = 5.
0A, VGS = 4.
5V VDD = 10V, ID = 1A, VGS = 4.
5V, RGEN = 6Ω 20 18 60 28 10 2.
3 2.
9 1.
0 1.
2 40 40 108 56 15 ns ns ns ns nC nC nC A V d TA = 25 C unless otherwise noted Symbol BVDSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss Test Condition VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 8V, VDS = 0V VGS = -8V, VDS = 0V VGS = VDS, ID = 250µA VGS = 4.
5V, ID = 5.
0A VGS = 2.
5V, ID = 4.
5A VDS = 10V, ID = 5.
0A 0.
5 27 33 10 500 300 140 Min 20 1 100 -100 1.
2 33 40 Typ Max Units V µA nA nA V mΩ mΩ S pF pF pF 7 VDS = 8V, VGS = 0V, f =...


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