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CES2323

Chino-Excel Technology
Part Number CES2323
Manufacturer Chino-Excel Technology
Description P-Channel MOSFET
Published Mar 11, 2011
Detailed Description CES2323 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.1A, RDS(ON) = 48mΩ @VGS = -10V. RDS(ON) = 8...
Datasheet PDF File CES2323 PDF File

CES2323
CES2323

Overview
CES2323 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -4.
1A, RDS(ON) = 48mΩ @VGS = -10V.
RDS(ON) = 80mΩ @VGS = -4.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D G D G SOT-23 S S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C ±20 -4.
1 -16 1.
25 -55 to 150 Maximum Power Dissipation Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units C/W www.
DataSheet4U.
com Details are subject to change without notice .
1 Rev 1.
2006.
Sep http://www.
cetsemi.
com CES2323 Electrical Characteristics Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -1.
7A VDS = -15V, ID = -4.
1A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω 11 4 59 23 13.
8 1.
8 2.
2 -4.
1 -1.
2 22 8 118 46 18.
3 ns ns ns ns nC nC nC A V VGS(th) RDS(on) VGS = VDS, ID = -250µA VGS = -10V, ID = -4.
1A VGS = -4.
5V, ID = -3.
2A VDS = -15V, ID = -4.
1A VDS = -15V, VGS = 0V, f = 1.
0 MHz -1 40 60 4 845 155 95 -3 48 80 V mΩ mΩ S pF pF pF BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250µA VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -30 -1 100 -100 V µA TA = 25 C unless otherwi...


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