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CES2321

CET
Part Number CES2321
Manufacturer CET
Description P-Channel MOSFET
Published Oct 2, 2015
Detailed Description CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.8A, RDS(ON) = 55mΩ @VGS = -4.5V. RDS(ON) =...
Datasheet PDF File CES2321 PDF File

CES2321
CES2321

Overview
CES2321 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -3.
8A, RDS(ON) = 55mΩ @VGS = -4.
5V.
RDS(ON) = 62mΩ @VGS = -2.
5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D DS G SOT-23 G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS -20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID -3.
8 IDM -15.
2 Maximum Power Dissipation PD 1.
25 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 100 Units V V ...


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