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H5N5007P

Renesas
Part Number H5N5007P
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Apr 8, 2016
Detailed Description H5N5007P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High...
Datasheet PDF File H5N5007P PDF File

H5N5007P
H5N5007P

Overview
H5N5007P Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1116-0400 (Previous: ADE-208-1404B) Rev.
4.
00 Sep 07, 2005 1.
Gate 2.
Drain (Flange) 3.
Source Rev.
4.
00 Sep 07, 2005 page 1 of 6 H5N5007P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25...


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