CES2304
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 2.8A, RDS(ON) = 65mΩ (typ) @VGS = 10V. RDS(ON) = 90mΩ (typ) @VGS = 4.5V.
High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package.
D
DS G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Sy...
