P-Channel MOSFET. AO6409A Datasheet

AO6409A MOSFET. Datasheet pdf. Equivalent

Part AO6409A
Description P-Channel MOSFET
Feature AO6409A 20V P-Channel MOSFET General Description Product Summary The AO6409A uses advanced trench.
Manufacture Alpha & Omega Semiconductors
Total Page 5 Pages
Datasheet
Download AO6409A Datasheet



AO6409A
AO6409A
20V P-Channel MOSFET
General Description
Product Summary
The AO6409A uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch applications.
VDS
ID (at VGS=-4.5V)
RDS(ON) (at VGS= -4.5V)
RDS(ON) (at VGS= -2.5V)
RDS(ON) (at VGS= -1.8V)
ESD protected
-20V
-5.5A
< 41mW
< 53mW
< 65mW
TSOP6
Top View
Bottom View
Top View
D1
D2
G3
6D
5D
4S
G
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
ID
IDM
TA=25°C
Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum
-20
±8
-5.5
-4.2
-30
2.1
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
RqJA
RqJL
Typ
48
75
37
Max
60
90
45
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 4.0: January 2019
www.aosmd.com
Page 1 of 5



AO6409A
AO6409A
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=-250mA, VGS=0V
VDS=-20V, VGS=0V
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±8V
VDS=VGS, ID=-250mA
VGS=-4.5V, VDS=-5V
VGS=-4.5V, ID=-5.5A
RDS(ON)
gFS
VSD
IS
Static Drain-Source On-Resistance
VGS=-2.5V, ID=-4A
VGS=-1.8V, ID=-2A
Forward Transconductance
VDS=-5V, ID=-5.5A
Diode Forward Voltage
IS=-1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
-20
-0.3
-30
-0.57
34
49
42
52
20
-0.64
-1
-5
±10
-0.9
41
59
53
65
-1
-2
V
mA
mA
V
A
mW
mW
mW
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
600 751 905
80 115 150
48 80 115
6 13 20
pF
pF
pF
W
SWITCHING PARAMETERS
Qg Total Gate Charge
7.4 9.3 11 nC
Qgs Gate Source Charge
VGS=-4.5V, VDS=-10V, ID=-5.5A 0.8 1 1.2 nC
Qgd Gate Drain Charge
1.3 2.2 3.1 nC
tD(on)
Turn-On DelayTime
13 ns
tr Turn-On Rise Time
VGS=-4.5V, VDS=-10V, RL=1.8W,
9
ns
tD(off)
Turn-Off DelayTime
RGEN=3W
19 ns
tf Turn-Off Fall Time
29 ns
trr Body Diode Reverse Recovery Time IF=-5.5A, dI/dt=500A/ms
20 26 32 ns
Qrr Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/ms
40 51 62 nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RqJA is the sum of the thermal impedence from junction to lead RqJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4.0: January 2019
www.aosmd.com
Page 2 of 5





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