AO6401 Datasheet (data sheet) PDF





AO6401 Datasheet, P-Channel Enhancement Mode Field Effect Transistor

AO6401   AO6401  

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AO6401 P-Channel Enhancement Mode Field Effect Transistor General Description T he AO6401 uses advanced trench technolo gy to provide excellent RDS(ON), low ga te charge and operation with gate volta ges as low as 2.5V. This device is suit able for use as a load switch or in PWM applications. Standard Product AO6401 is Pb-free (meets ROHS & Sony 259 speci fications). AO6401L is a Green Product ordering option. AO6401 and AO6401L are electrically identical. Features VDS (V) = -30V ID = -5 A (VGS = -10V) RDS(O N) < 49mΩ (VGS = -10V) RDS(ON) < 64m (VGS = -4.5V) RDS(ON) < 119mΩ (VGS = -2.5V) D TSOP6 Top View D D G 1 6 2 5 3 4 D D S www.DataSheet4U.c

AO6401 Datasheet, P-Channel Enhancement Mode Field Effect Transistor

AO6401   AO6401  
om G S Absolute Maximum Ratings TA=25 C unless otherwise noted Parameter Sym bol VDS Drain-Source Voltage VGS Gate-S ource Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipatio n A B Maximum -30 ±12 -5 -4.2 -30 2 1 .44 -55 to 150 Units V V A TA=25°C T A=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temp erature Range Thermal Characteristics P arameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum J unction-to-Lead C Symbol t ≤ 10s Ste ady-State Steady-State RθJA RθJL Typ 47.5 74 37 Max 62.5 110 50 Units °C /W °C/W °C/W Alpha & Omega Semicondu ctor, Ltd. AO6401 Electrical Characte ristics (TJ=25°C unless otherwise note d) Parameter Symbol STATIC PARAMETERS B VDSS Drain-Source Breakdown Voltage IDS S IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakag e current Gate Threshold Voltage On sta te drain current Conditions ID=-250µA, VGS=0V VDS=-24V, VGS=0V TJ=55°C VDS=0 V, VGS=±12V VDS=VGS ID=-250µA VGS=-4. 5V, VDS=-5V VGS=-10V, ID=-5A Static Dra in-Source On-Resistance TJ=125°C VGS=- 4.5V, ID=-4A 7 53 81 11 -0.75 -0.7 -25 42 49 74 64 119 -1 -3 943 108 73 6 9.5 2.1 2.9 6 3 40 11 21.2 12.8 -1 Min -30 -1 -5 ±100 -1.3 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC gFS VSD IS VG








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