Effect Transistor. AO6414 Datasheet


AO6414 Transistor. Datasheet pdf. Equivalent


Part Number

AO6414

Description

N-Channel Enhancement Mode Field Effect Transistor

Manufacture

Alpha & Omega Semiconductors

Total Page 4 Pages
Datasheet
Download AO6414 Datasheet


AO6414
AO6414
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6414 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. It
offers operation over a wide gate drive range from
2.5V to 12V. This device is suitable for use as a load
switch. Standard product AO6414 is Pb-free (meets
ROHS & Sony 259 specifications). AO6414L is a
Green Product ordering option. AO6414 and
AO6414L are electrically identical.
Features
VDS (V) = 55V
ID = 2.4A (VGS = 4.5V)
RDS(ON) < 160mΩ (VGS = 4.5V)
RDS(ON) < 200mΩ (VGS = 2.5V)
www.DataSheet4U.com
TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
55
±12
2.3
1.9
9
1.56
1.1
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
58
94
37
Max
80
120
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.

AO6414
AO6414
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=10mA, VGS=0V
VDS=44V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Source leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
VDS=0V, VGS=±12V
VDS=VGS ID=250μA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=2.4A
VGS=2.5V, ID=1.5A
Forward Transconductance
VDS=5V, ID=2.4A
Diode Forward Voltage
IS=1A
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=25V, ID=2.4A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr Turn-On Rise Time
VGS=10V, VDS=25V, RL=10.4Ω,
tD(off)
Turn-Off DelayTime
RGEN=3Ω
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=2.4A, dI/dt=100A/μs
Qrr Body Diode Reverse Recovery Charge IF=2.4A, dI/dt=100A/μs
Min
55
0.6
10
Typ Max Units
0.002
1.3
1
5
±100
2
125 160
175 210
157 200
11
0.78 1
1.9
V
μA
nA
V
A
mΩ
mΩ
S
V
A
214 300
31
12.6
1.3 3
pF
pF
pF
Ω
2.6 3.3
0.6
0.8
2.3
2.4
16.5
2
20 30
17
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value
in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev0: Nov. 2005
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.


Features AO6414 N-Channel Enhancement Mode Field Effect Transistor General Description T he AO6414 uses advanced trench technolo gy to provide excellent RDS(ON) and low gate charge. It offers operation over a wide gate drive range from 2.5V to 12 V. This device is suitable for use as a load switch. Standard product AO6414 i s Pb-free (meets ROHS & Sony 259 specif ications). AO6414L is a Green Product o rdering option. AO6414 and AO6414L are electrically identical. Features VDS ( V) = 55V ID = 2.4A (VGS = 4.5V) RDS(ON) < 160m Ω (VGS = 4.5V) RDS(ON) < 200m Ω (VGS = 2.5V) TSOP-6 Top View www.Da taSheet4U.com D D D G 1 6 2 5 3 4 D D S G S Absolute Maximum Ratings TA= 25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gat e-Source Voltage Continuous Drain TA=25 °C Current A TA=70°C ID Pulsed Drain Current B Maximum 55 ±12 2.3 1.9 9 1. 56 1.1 -55 to 150 Units V V A IDM PD TJ, TSTG TA=25°C Power Dissipation TA =70°C Junction and Storage Temperature Range Thermal Characteristics P.
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