AO6420 N-Channel MOSFET Datasheet

AO6420 Datasheet, PDF, Equivalent


Part Number

AO6420

Description

60V N-Channel MOSFET

Manufacture

Alpha & Omega Semiconductors

Total Page 4 Pages
Datasheet
Download AO6420 Datasheet


AO6420
AO6420
60V N-Channel MOSFET
General Description
The AO6420 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
VDS (V) = 60V
ID = 4.2A (VGS = 10V)
RDS(ON) < 60m(VGS = 10V)
RDS(ON) < 75m(VGS = 4.5V)
TSOP6
Top View
Bottom View
Top View
D1
D2
G3
6D
5D
4S
G
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A,F
TA=70°C
Pulsed Drain Current B
ID
IDM
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
60
±20
4.2
3.4
20
2.00
1.28
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
48
74
35
Max
62.5
110
40
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

AO6420
AO6420
N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=60V, VGS=0V
IGSS
VGS(th)
ID(ON)
RDS(ON)
gFS
VSD
IS
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
VGS=10V, VDS=5V
VGS=10V, ID=4.2A
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VGS=4.5V, ID=3A
VDS=5V, ID=4.2A
IS=1A,VGS=0V
Maximum Body-Diode Continuous Current
TJ=55°C
TJ=125°C
60
1
20
1
5
100
2.3 3
50
85
60
13
0.78
60
75
1
3
V
µA
nA
V
A
m
m
S
V
A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=30V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
450 540
60
25
1.65 2
pF
pF
pF
SWITCHING PARAMETERS
Qg(10V)
Qg(4.5V)
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
Total Gate Charge
Total Gate Charge
Gate Source Charge
VGS=10V, VDS=30V, ID=4.2A
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=30V, RL=7,
RGEN=3
Turn-Off Fall Time
Body Diode Reverse Recovery Time IF=4.2A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=4.2A, dI/dt=100A/µs
9.5
4.3
1.6
2.2
5.1
2.6
15.9
2
25.1
28.7
11.5
5.5
7
4
20
3
35
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t 10s thermal resistance rating.
Rev2: Feb. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


Features AO6420 60V N-Channel MOSFET General Des cription The AO6420 uses advanced trenc h technology to provide excellent RDS(O N) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 4.2A (VGS = 10V) RDS(ON ) < 60mΩ (VGS = 10V) RDS(ON) < 75mΩ (VGS = 4.5V) TSOP6 Top View Bottom View Top View D1 D2 G3 6D 5D 4S G Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Sym bol Drain-Source Voltage VDS Gate-So urce Voltage VGS Continuous Drain TA= 25°C Current A,F TA=70°C Pulsed Dr ain Current B ID IDM Power Dissipatio n TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Max imum 60 ±20 4.2 3.4 20 2.00 1.28 -55 t o 150 Thermal Characteristics Paramete r Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction -to-Lead C t ≤ 10s Steady-State Stea dy-State Symbol RθJA RθJL Typ 48 74 35 Max 62.5 110 40 D S Units V V A W °C Units °C/W °C/W °C/W Alpha & Omeg.
Keywords AO6420, datasheet, pdf, Alpha & Omega Semiconductors, 60V, N-Channel, MOSFET, O6420, 6420, 420, AO642, AO64, AO6, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)