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HAT2207C
Silicon N-Channel Power MOSFET
Description
HAT2207C Silicon N Channel MOS FET Power Switching Features Low on-resistance RDS(on) = 100 mΩ typ. (at VGS = 4.5 V) Low drive current. High density mounting 2.5 V gate drive devices. Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 3 2 1 REJ03G1239-0600 Rev.6.00 Feb 28, 2006 23 45 DD DD 6 G S 1 1. Source 2...
Renesas Technology
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