CES2305
P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -4A, RDS(ON) = 55mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. RDS(ON) = 120mΩ @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-23 package. G
D G SOT-23 S
PRELIMINARY
D
S
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-...
